Title :
Deep level transient spectroscopy characterization of porous GaP layers
Author_Institution :
Inst. of Appl. Phys., Acad. of Sci. of Moldova, Chisinau, Moldova
Abstract :
Deep Level Transient Spectroscopy (DLTS) spectra of Schottky diodes on both [100] and [111] GaP substrates were measured. The parameters of one hole and three electron traps were determined. The set of the charge carrier traps was found to depend upon the orientation of the substrate. These traps are suggested to be formed during the high-energy ion implantation and electrochemical processing.
Keywords :
"Spectroscopy","Electron traps","Dark current","Temperature dependence","Schottky diodes","Etching","Crystals","Charge carrier processes","Thermal conductivity","Physics"
Conference_Titel :
Semiconductor Conference, 2000. CAS 2000 Proceedings. International
Print_ISBN :
0-7803-5885-6
DOI :
10.1109/SMICND.2000.890204
