An analytical approach to Kirk effect modelling

This paper presents the analytical approach to modelling of high injection effects in bipolar transistors. It has been shown that Kirk effect occurs due to drop of carrier velocity within the vanishing base-collector depletion region at high injection operation of BJT. It leads to the "inverter"-like behavior of carrier velocity dependence on voltage, extracted at the end of base quasi-neutral region for low level injection. An analytical expression is derived which enables the calculation of minimum carrier velocity in high injection regime, showing it´s variation with N/sup -/ technological parameters.