• DocumentCode
    3783553
  • Title

    Deep levels in SOI-structures investigated by charge and capacitance DLTS

  • Author

    I.V. Antonova;J. Stano;O.V. Naumova;D.V. Nikolaev;V.P. Popov;V.A. Skuratov

  • Author_Institution
    Inst. of Semicond. Phys., Novosibirsk, Russia
  • fYear
    2000
  • Firstpage
    273
  • Lastpage
    276
  • Abstract
    Deep levels in the Si band gap were investigated separately in the substrate wafer, in the buried oxide/substrate interface, in the Si film and in the top Si/SiO/sub 2/ interface of the Silicon-on-insulator (SOI) structures. In this study we compared the state density distributions, D/sub it/, in the band gap of Si in the Si/thermal SiO/sub 2/ interface, deduced from DLTS measurements, and in the bonded interface of the SOI structure.
  • Keywords
    "Capacitance","Substrates","Silicon on insulator technology","Semiconductor films","Wafer bonding","Fabrication","Conductivity","Ohmic contacts","Voltage","Capacitance-voltage characteristics"
  • Publisher
    ieee
  • Conference_Titel
    Ion Implantation Technology, 2000. Conference on
  • Print_ISBN
    0-7803-6462-7
  • Type

    conf

  • DOI
    10.1109/IIT.2000.924142
  • Filename
    924142
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3783553