Deep levels in SOI-structures investigated by charge and capacitance DLTS

Deep levels in the Si band gap were investigated separately in the substrate wafer, in the buried oxide/substrate interface, in the Si film and in the top Si/SiO/sub 2/ interface of the Silicon-on-insulator (SOI) structures. In this study we compared the state density distributions, D/sub it/, in the band gap of Si in the Si/thermal SiO/sub 2/ interface, deduced from DLTS measurements, and in the bonded interface of the SOI structure.