Investigation of amorphous V/sub 2/O/sub 5/-P/sub 2/O/sub 5/ with different metallic contacts

Amorphous semiconductors applied in switching and memory techniques are, generally, chalcogenous glasses. Their main disadvantage consisted of a relatively low current density. Due to this fact, research has moved on to an amorphous substance, V/sub 2/O/sub 5/-P/sub 2/O/sub 5/, with a low CuO dopant content (0.5 to 2.0%) that exhibited higher current density. The metal contact material plays an important role when semiconductive or dielectric measurements were prepared from a blend composed of 70 and 30 mole % of V/sub 2/O/sub 5/ and P/sub 2/O/sub 5/, respectively. CuO was added as a doping admixture to these fundamental constituents. The complex impedance was used to present the measured results and characterise the electrical properties of the measured metal-V/sub 2/O/sub 5/-P/sub 2/O/sub 5/-metal structure.