DocumentCode
3783735
Title
Radiation detector based on bulk semi-insulating GaAs: Role of detector geometry and electrode technology
Author
F. Dubecky;B. Znt´ko;J. Darmo;M. Krempasky;M. Sekacova;V. Necas;R. Senderak;A. Foster;P. Kordos
Author_Institution
Inst. of Electr. Eng., Slovak Acad. of Sci., Bratislava, Slovakia
fYear
2000
Firstpage
187
Lastpage
190
Abstract
The performance of radiation detectors which are based on semi-insulating GaAs with the PC blocking electrode prepared by MBE, as well as the Schottky electrode is presented. The role of the detector geometry including base thickness and area of the blocking contact is studied. The influence of the back electrode technology and detector operation temperature is also illustrated.
Keywords
"Radiation detectors","Gallium arsenide","Geometry","Electrodes","Temperature","Fabrication","Back","Spectroscopy","Schottky barriers","Metallization"
Publisher
ieee
Conference_Titel
Semiconducting and Insulating Materials Conference, 2000. SIMC-XI. International
Print_ISBN
0-7803-5814-7
Type
conf
DOI
10.1109/SIM.2000.939224
Filename
939224
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