• DocumentCode
    3783736
  • Title

    The effect of electric field on the self-organized quantum dots

  • Author

    A. Babinski;K.P. Korona;J.M. Baranowski

  • Author_Institution
    Inst. of Experimental Phys., Warsaw Univ., Poland
  • fYear
    2000
  • Firstpage
    232
  • Lastpage
    235
  • Abstract
    The effect of electric field on the photoluminescence (PL) from quantum dots (QDs) is investigated in this work. The results of PL measurements from self-organized QDs InGaAs/GaAs embedded in a field-effect structure are presented. The lineshape changes, which accompany the QDs quenching are discussed in terms of thermal evaporation and tunneling of carriers out of the QDs. The results of time-resolved PL in the biased structure are also presented and discussed.
  • Keywords
    "Quantum dots","US Department of Transportation","Gallium arsenide","Capacitance","Photoluminescence","Atomic force microscopy","Laser mode locking","Laser excitation","Temperature","Tunneling"
  • Publisher
    ieee
  • Conference_Titel
    Semiconducting and Insulating Materials Conference, 2000. SIMC-XI. International
  • Print_ISBN
    0-7803-5814-7
  • Type

    conf

  • DOI
    10.1109/SIM.2000.939233
  • Filename
    939233
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3783736