DocumentCode
3783737
Title
Post-growth thermal treatment of the InAs/GaAs quantum dots
Author
J. Jasinski;A. Babinski;R. Bozck;J.M. Baranowski
Author_Institution
Inst. of Experimental Phys., Warsaw Univ., Poland
fYear
2000
Firstpage
272
Lastpage
275
Abstract
The effect of post-growth thermal treatment on the InAs/GaAs quantum dots is investigated. The photoluminescence (PL) and transmission electron microscopy (TEM) studies of samples annealed at temperatures up to 950/spl deg/C are presented. A complete dissolution of QDs and substantial broadening of the wetting layer (WL) can be seen by TEM. Therefore the thermally induced modification of the WL (rather than QDs) is responsible for a blue-shift and narrowing of PL peaks in our structure containing InAs/GaAs QDs.
Keywords
"Gallium arsenide","Quantum dots","US Department of Transportation","Photoluminescence","Temperature","Epitaxial growth","Rapid thermal annealing","Molecular beam epitaxial growth","Transmission electron microscopy","Epitaxial layers"
Publisher
ieee
Conference_Titel
Semiconducting and Insulating Materials Conference, 2000. SIMC-XI. International
Print_ISBN
0-7803-5814-7
Type
conf
DOI
10.1109/SIM.2000.939242
Filename
939242
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