DocumentCode
3783860
Title
Development of novel photodiodes as a photon counter
Author
T. Miyachi;T. Edamura;S. Furuta;N. Hasebe;M. Higuchi;M. Ishiwata;H. Kan;R. Kikuchi;T. Masumura;T. Matsuyama;A. Misaki;I. Nakamura;T. Sugawara;T. Tazawa;C. Tezuka
Author_Institution
Center for Nucl. Study, Tokyo Univ., Japan
Volume
1
fYear
2000
Firstpage
42574
Abstract
Superlattice type photodiodes of a GaAs-Al/sub x/Ga/sub 1-x/As structure were studied at room temperature. A combination of potential-well width and barrier width was sensitive to the charge multiplication factor. Using a diode with a 10 nm well and a 15 nm barrier, the detector characteristics were investigated from a point of view of achieving a high gain. This type of photodiode was confirmed to be sensitive to Cherenkov light generated in water. Effects of carrier doping up to 10/sup 18/ cm/sup -3/ at room temperature on the multiplication rate is discussed.
Keywords
"Photodiodes","Counting circuits","Semiconductor diodes","Detectors","Ocean temperature","Physics","Gallium arsenide","Photoconductivity","Dark current","Voltage"
Publisher
ieee
Conference_Titel
Nuclear Science Symposium Conference Record, 2000 IEEE
ISSN
1082-3654
Print_ISBN
0-7803-6503-8
Type
conf
DOI
10.1109/NSSMIC.2000.949262
Filename
949262
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