DocumentCode
3783878
Title
A high-frequency high-Q CMOS active inductor with DC bias control
Author
A. Ilker Karsilayan;R. Schaumann
Author_Institution
Dept. of Electr. Eng., Texas A&M Univ., College Station, TX, USA
Volume
1
fYear
2000
Firstpage
486
Abstract
The design of a very simple CMOS high-Q active inductor suitable for applications at low supply voltage and high frequencies is discussed. The inductor value, L, and the quality factor, Q, are independently adjustable by two PMOS varactors (variable capacitors). Alternatively, L can be tuned via a bias current. The inductor´s DC level is set by a bias voltage. The self-resonance frequency, f/sub r/, is larger than 1GHz and very high values of Q, up to Q=/spl infin/, can be obtained so that circuit can be used for constructing high-frequency oscillators. The performance of the electronic inductor is demonstrated by simulation.
Keywords
"Active inductors","Frequency","Q factor","Circuit stability","Voltage","Equivalent circuits","Circuit simulation","Circuit noise","CMOS technology","Admittance"
Publisher
ieee
Conference_Titel
Circuits and Systems, 2000. Proceedings of the 43rd IEEE Midwest Symposium on
Print_ISBN
0-7803-6475-9
Type
conf
DOI
10.1109/MWSCAS.2000.951689
Filename
951689
Link To Document