DocumentCode :
3783922
Title :
Microwave transistors noise modeling by using variable noise wave temperatures
Author :
O.R. Pronic;V.V. Markovic
Volume :
1
fYear :
2001
fDate :
6/23/1905 12:00:00 AM
Firstpage :
313
Abstract :
In this paper we proposed a new noise modeling procedure of microwave transistors. The noise modeling is based on a wave representation of transistor intrinsic circuit. The variable noise wave temperatures are introduced as empirical parameters of the model and their frequency dependence is modeled using polynomial regression. In that way noise temperatures can be computed for any frequency from desired frequency range yielding modeling of noise parameters with very good accuracy.
Keywords :
"Microwave transistors","Circuit noise","Equivalent circuits","HEMTs","Microwave FETs","Temperature dependence","Frequency dependence","Computer networks","MESFET circuits","Polynomials"
Publisher :
ieee
Conference_Titel :
Telecommunications in Modern Satellite, Cable and Broadcasting Service, 2001. TELSIKS 2001. 5th International Conference on
Print_ISBN :
0-7803-7228-X
Type :
conf
DOI :
10.1109/TELSKS.2001.954899
Filename :
954899
Link To Document :
بازگشت