DocumentCode :
3784059
Title :
High quantum efficiency, 40 GHz InGaAs twin waveguide PIN photodetectors
Author :
M.R. Gokhale; Fengnian Xia;J.K. Thomson;P. Studenkov;S.R. Forrest
Author_Institution :
ASIP Inc., Somerset, NJ, USA
Volume :
2
fYear :
2001
fDate :
6/23/1905 12:00:00 AM
Firstpage :
885
Abstract :
Asymmetric twin-waveguide (ATG) technology wherein active and passive devices are formed in two separate waveguides, and light is coupled between them via a lateral taper, has proven to be a versatile integration platform for photonic integrated circuits. Here, we demonstrate a /spl lambda/=1.55 /spl mu/m wavelength, high-speed, high-efficiency photodetector made by integrating a spot-size converter with an evanescently coupled In/sub 0.53/Ga/sub 0.47/As absorption region. While several versions of waveguide photodetectors have been proposed to overcome the bandwidth-efficiency trade-off, the ATG design provides a simple means of fabrication with the possibility of monolithically integrating detectors with other optical components such as semiconductor optical amplifiers and in-plane waveguide filters.
Keywords :
"Indium gallium arsenide","Optical waveguides","Coupling circuits","Photodetectors","Optical waveguide components","Semiconductor waveguides","Integrated circuit technology","Optical coupling","Photonic integrated circuits","Wavelength converters"
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics Society, 2001. LEOS 2001. The 14th Annual Meeting of the IEEE
ISSN :
1092-8081
Print_ISBN :
0-7803-7105-4
Type :
conf
DOI :
10.1109/LEOS.2001.969100
Filename :
969100
Link To Document :
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