Title :
Investigations on the influence of traps in AlGaN/GaN HEMTs
Author :
M. Wolter;P. Javorka;M. Marso;A. Alam;R. Carius;A. Fox;M. Heuken;H. Luth;P. Kordos
Author_Institution :
Inst. of Thin Films & Interfaces, Res. Centre Julich, Germany
fDate :
6/23/1905 12:00:00 AM
Abstract :
This paper analyses the deep level states in AlGaN/GaN layer systems. These deep levels act as traps and influence the electrical properties of HEMTs, that are fabricated with these layers. With the use of photocurrent measurements of RoundHEMTs, we could identify electron traps with energy levels of /spl sim/2.7 eV and /spl sim/3.2 eV. Furthermore, optical quenching could be found in the energy range of 1.24-2.25 eV.
Keywords :
"Aluminum gallium nitride","Gallium nitride","HEMTs","MODFETs","Electron traps","Charge carrier processes","Photoconductivity","Electron optics","Optical buffering","Spontaneous emission"
Conference_Titel :
Electron Devices for Microwave and Optoelectronic Applications, 2001 International Symposium on
Print_ISBN :
0-7803-7049-X
DOI :
10.1109/EDMO.2001.974299
