• DocumentCode
    3784113
  • Title

    Investigations on the influence of traps in AlGaN/GaN HEMTs

  • Author

    M. Wolter;P. Javorka;M. Marso;A. Alam;R. Carius;A. Fox;M. Heuken;H. Luth;P. Kordos

  • Author_Institution
    Inst. of Thin Films & Interfaces, Res. Centre Julich, Germany
  • fYear
    2001
  • fDate
    6/23/1905 12:00:00 AM
  • Firstpage
    149
  • Lastpage
    154
  • Abstract
    This paper analyses the deep level states in AlGaN/GaN layer systems. These deep levels act as traps and influence the electrical properties of HEMTs, that are fabricated with these layers. With the use of photocurrent measurements of RoundHEMTs, we could identify electron traps with energy levels of /spl sim/2.7 eV and /spl sim/3.2 eV. Furthermore, optical quenching could be found in the energy range of 1.24-2.25 eV.
  • Keywords
    "Aluminum gallium nitride","Gallium nitride","HEMTs","MODFETs","Electron traps","Charge carrier processes","Photoconductivity","Electron optics","Optical buffering","Spontaneous emission"
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices for Microwave and Optoelectronic Applications, 2001 International Symposium on
  • Print_ISBN
    0-7803-7049-X
  • Type

    conf

  • DOI
    10.1109/EDMO.2001.974299
  • Filename
    974299
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3784113