DocumentCode :
3784166
Title :
Growth of PbTe crystals for thermoelectric applications
Author :
Xu Jiayue; Zhang Aiqiong
Author_Institution :
Inst. of Ceramics, Acad. Sinica, Shanghai, China
fYear :
2001
fDate :
6/23/1905 12:00:00 AM
Firstpage :
150
Lastpage :
153
Abstract :
A modified vertical Bridgman method was performed to grow PbTe single crystals for thermoelectric applications. A quartz ampoule was used as the crucible with the dimensions of 31 mm in inner diameter and 425 mm in length. PbTe was synthesized in the sealed crucible then grown at a rate of 0.1-0.3 mm/hr. The as-grown boule contained several large crystal grains and the largest size of the grain is 14 /spl times/ 22 /spl times/ 30 mm/sup 3/. The PbTe crystal has cubic structure determined by X-ray diffraction.
Keywords :
"Crystals","Thermoelectricity","Temperature control","Furnaces","Surface morphology","Lead compounds","Crystalline materials","Semiconductor materials","Infrared detectors","Temperature measurement"
Publisher :
ieee
Conference_Titel :
Thermoelectrics, 2001. Proceedings ICT 2001. XX International Conference on
ISSN :
1094-2734
Print_ISBN :
0-7803-7205-0
Type :
conf
DOI :
10.1109/ICT.2001.979844
Filename :
979844
Link To Document :
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