Distortion simulation of 90 nm nMOSFET for RF applications

This paper studies the impact of device structure and process parameters variation on the third order harmonic distortion of 90 nm nMOSFETs, the next generation CMOS technology node. Simulation results show that polysilicon doping and S/D resistances are playing an important role in device distortion characteristics. Both S/D extension and halo doping concentration can be optimized to achieve desirable I-V characteristics as well as reduced distortion.