Simulation and design of SiGe HBTs for power amplification at 10 GHz

Device modeling using a commercial numerical simulator has been employed for SiGe heterojunction bipolar transistor (HBT) device design for high frequency (10 GHz), high power applications. In this study, the effects of the design of the epitaxial layer structure on power gain at 10 GHz were investigated. In particular, the base doping and width, the Germanium concentration, profile and width, and the collector doping were investigated. Device layout and self-heating effects were not considered. The device performance was also investigated as a function of the displacement of the collector p-n junction from its SiGe/Si heterojunction and the associated formation of a parasitic barrier in the conduction energy band.