Development of double-sided microstructured Si(Li) detectors

A new technique for manufacturing double-sided structured Si(Li) detectors has been established. The position-sensitive structure on the implanted p/sup +/-contact can be made smaller than 100 /spl mu/m by photolithography followed by plasma etching of grooves to separate the position elements. By modifying this technique position-sensitive structures on a thin (/spl sim/30 /spl mu/m) Li-diffused contact were created. Areas of 50 mm /spl times/ 50 mm were divided into 50 or 100 strips with a pitch of 1 mm or 500 /spl mu/m, respectively. The strips were separated by /spl sim/35-/spl mu/m-deep and /spl sim/50-/spl mu/m-wide grooves. Measurements of the electrical resistance of the grooves and reverse current of the strips are presented. Charge splitting on the adjacent strips shows practically no charge loss through the groove. Small pixel effects are demonstrated on a Li-diffused contact (100 strips with the pitch of 500 /spl mu/m) and on the first double-sided Si(Li) detector (50 /spl times/ 50 strips with a pitch of 1 mm). By measuring the relative time distribution of the signal from both contacts it is possible to obtain some three-dimensional imaging capability.