• DocumentCode
    3784663
  • Title

    Memory effects in argon, nitrogen, and hydrogen

  • Author

    M.M. Pejovic;G.S. Ristic

  • Author_Institution
    Fac. of Electron. Eng., Nis Univ., Serbia
  • Volume
    30
  • Issue
    3
  • fYear
    2002
  • Firstpage
    1315
  • Lastpage
    1319
  • Abstract
    The contributions of the positive ions and neutral active states, remaining from previous discharge, as well as the contribution of gamma photons from /sub 27//sup 60/Co radiation source to the electrical breakdown in argon, nitrogen, and hydrogen at 6.6-mbar pressure for the various afterglow periods have been analyzed using the time delay method. The estimations of the positive ion recombination times of argon, nitrogen, and hydrogen, and the lifetime of argon metastable state, as well as the atom recombination times of nitrogen and hydrogen have been performed using this method.
  • Keywords
    "Argon","Nitrogen","Hydrogen","Fault location","Electric breakdown","Delay effects","Life estimation","Lifetime estimation","State estimation","Spontaneous emission"
  • Journal_Title
    IEEE Transactions on Plasma Science
  • Publisher
    ieee
  • ISSN
    0093-3813
  • Type

    jour

  • DOI
    10.1109/TPS.2002.802143
  • Filename
    1158294