DocumentCode :
3784663
Title :
Memory effects in argon, nitrogen, and hydrogen
Author :
M.M. Pejovic;G.S. Ristic
Author_Institution :
Fac. of Electron. Eng., Nis Univ., Serbia
Volume :
30
Issue :
3
fYear :
2002
Firstpage :
1315
Lastpage :
1319
Abstract :
The contributions of the positive ions and neutral active states, remaining from previous discharge, as well as the contribution of gamma photons from /sub 27//sup 60/Co radiation source to the electrical breakdown in argon, nitrogen, and hydrogen at 6.6-mbar pressure for the various afterglow periods have been analyzed using the time delay method. The estimations of the positive ion recombination times of argon, nitrogen, and hydrogen, and the lifetime of argon metastable state, as well as the atom recombination times of nitrogen and hydrogen have been performed using this method.
Keywords :
"Argon","Nitrogen","Hydrogen","Fault location","Electric breakdown","Delay effects","Life estimation","Lifetime estimation","State estimation","Spontaneous emission"
Journal_Title :
IEEE Transactions on Plasma Science
Publisher :
ieee
ISSN :
0093-3813
Type :
jour
DOI :
10.1109/TPS.2002.802143
Filename :
1158294
Link To Document :
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