DocumentCode
3784663
Title
Memory effects in argon, nitrogen, and hydrogen
Author
M.M. Pejovic;G.S. Ristic
Author_Institution
Fac. of Electron. Eng., Nis Univ., Serbia
Volume
30
Issue
3
fYear
2002
Firstpage
1315
Lastpage
1319
Abstract
The contributions of the positive ions and neutral active states, remaining from previous discharge, as well as the contribution of gamma photons from /sub 27//sup 60/Co radiation source to the electrical breakdown in argon, nitrogen, and hydrogen at 6.6-mbar pressure for the various afterglow periods have been analyzed using the time delay method. The estimations of the positive ion recombination times of argon, nitrogen, and hydrogen, and the lifetime of argon metastable state, as well as the atom recombination times of nitrogen and hydrogen have been performed using this method.
Keywords
"Argon","Nitrogen","Hydrogen","Fault location","Electric breakdown","Delay effects","Life estimation","Lifetime estimation","State estimation","Spontaneous emission"
Journal_Title
IEEE Transactions on Plasma Science
Publisher
ieee
ISSN
0093-3813
Type
jour
DOI
10.1109/TPS.2002.802143
Filename
1158294
Link To Document