Breakdown-voltage memory effect in a neon-filled diode at 1 mbar

Results of the investigation of the breakdown-voltage distribution dependence on the relaxation time of the diode [the curve U~/sub b~/=f(/spl tau/)], i.e., memory effect, in neon at p=1 mbar are presented in this paper. The memory effect is determined for the diode-relaxation times 0.1-100 s. The applied voltage was linearly increased with the increasing rate 10 V/s. For each value of the relaxation time, the series of 200 successive and independent measurements were done. The numerical fitting of the theoretical expression of the breakdown-voltage distribution on the histograms of the experimentally established data was used to determined relative yield in the diode for the different relaxation times Y/Y/sub 0/=f(/spl tau/). Results show that the yield in the diode decreased in that time interval in one order of magnitude. Quantitative parameters for two-step decreasing and qualitative explanation of these dependencies are given.