DocumentCode :
3784996
Title :
Multicell circuit model for high-power thyristor-type semiconductor devices
Author :
S. Schroder;D. Detjen;R.W.A.A. De Doncker
Author_Institution :
Inst. for Power Electron. & Electr. Drives, Aachen Univ., Germany
Volume :
39
Issue :
6
fYear :
2003
Firstpage :
1641
Lastpage :
1647
Abstract :
New device models for circuit simulation are developed for high-power thyristor-type devices, such as gate-turn-off thyristors, integrated gate-commutated thyristors, and MOS turn-off thyristors. These models are based on semiconductor physics, which guarantees a wide range of validity. In particular, the proposed models are based on the lumped charge approach. Coupled electrical and thermal behavior is implemented to allow transient thermal simulations. To account for the nonuniform current distribution during turn-off, several of these single-cell models are connected in parallel to simulate a complete device. Simulation results are compared with measurements.
Keywords :
"Semiconductor devices","Thyristors","Circuit simulation","Physics","Equations","Industry Applications Society","Power electronics","Space charge","Coupling circuits","Current distribution"
Journal_Title :
IEEE Transactions on Industry Applications
Publisher :
ieee
ISSN :
0093-9994
Type :
jour
DOI :
10.1109/TIA.2003.818974
Filename :
1248247
Link To Document :
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