DocumentCode
3785002
Title
Influence of temperature and optical confinement on threshold current of an InGaAs/InP quantum wire laser
Author
D.M. Gvozdic;A. Schlachetzki
Author_Institution
Inst. fur Halbleitertechnik, Tech. Univ. Braunschweig, Germany
Volume
9
Issue
3
fYear
2003
Firstpage
732
Lastpage
735
Abstract
In this paper, we investigate the influence of the temperature on gain and threshold current density of a V-groove quantum wire InGaAs/InP laser. The calculation shows that room-temperature operation can be achieved if the optical confinement is large enough (0.26% in our case), while its slight improvement above this limit (around 0.4%) can provide a significant reduction of the threshold current (more than 70%) and an improved temperature stability of the laser.
Keywords
"Threshold current","Indium gallium arsenide","Indium phosphide","Wire","Surface emitting lasers","Quantum dot lasers","Optical sensors","Optical materials","Temperature sensors","Quantum well lasers"
Journal_Title
IEEE Journal of Selected Topics in Quantum Electronics
Publisher
ieee
ISSN
1077-260X
Type
jour
DOI
10.1109/JSTQE.2003.818857
Filename
1250473
Link To Document