A back-wafer contacted silicon-on-glass integrated bipolar process. Part II. A novel analysis of thermal breakdown

Analytical expressions for the electrothermal parameters governing thermal instability in bipolar transistors, i.e., thermal resistance R/sub TH/, critical temperature T/sub crit/ and critical current J/sub C,crit/, are established and verified by measurements on silicon-on-glass bipolar NPNs. A minimum junction temperature increase above ambient due to selfheating that can cause thermal breakdown is identified and verified to be as low as 10-20/spl deg/C. The influence of internal and external series resistances and the thermal resistance explicitly included in the expressions for T/sub crit/ and J/sub C,crit/ becomes clear. The use of the derived expressions for determining the safe operating area of a device and for extracting the thermal resistance is demonstrated.