DocumentCode
378545
Title
Power MOSFETs having Schottky barrier drain contact
Author
Sakurai, Kenya ; Nishimura, Takeyoshi ; Obinata, Sigeyuki ; Momota, Seiji ; Nakajima, Tsunehiro ; Tagami, Saburo ; Furuhata, Shooichi ; Inakoshi, Yuji
Author_Institution
Fuji Electric Co.,Ltd.
fYear
1990
fDate
1990
Firstpage
126
Lastpage
130
Keywords
Artificial intelligence; Conductivity; Contact resistance; Erbium; Insulated gate bipolar transistors; MOSFETs; Power supplies; Production facilities; Schottky barriers; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Semiconductor Devices and ICs, 1990. ISPSD '90. Proceedings of the 2nd International Symposium on
ISSN
1063-6854
Type
conf
DOI
10.1109/ISPSD.1990.991072
Filename
991072
Link To Document