Integration of RF filters on GaAs substrate

Author

Gryba, T. ; Haddou, A. ; Sadaune, V. ; Zhang, V. ; Lefebvre, J.E. ; Doghech, E. ; Cattan, E. ; Remiens, D.

Author_Institution

Departement OAE, Univ. de Valenciennes, France

Volume

1

fYear

2001

fDate

2001

Firstpage

57

Abstract

Up to now, RF front-end and interstage surface acoustic wave (SAW) filters for mobile communication are mainly fabricated on LiNbO₃ and LiTaO₃ substrates. A monolithic integration of these filters on semiconductor substrates is highly desirable to miniaturize the outer dimensions of the cellular phones. Direct realization of SAW filters on non piezoelectric or weakly piezoelectric substrates is impossible. One alternative is the deposition of a piezoelectric film on the semiconductor substrate. In this paper, we present an analysis and realization of a ladder SAW filter built up on a two-layered structure made up of a ZnO film on a GaAs substrate in the 900 MHz frequency range

Keywords

II-VI semiconductors; UHF filters; cellular radio; ladder filters; piezoelectric semiconductors; piezoelectric thin films; surface acoustic wave filters; zinc compounds; 900 MHz; GaAs; RF filters; ZnO-GaAs; cellular phones; interstage surface acoustic wave; ladder filter; mobile communication; outer dimensions; piezoelectric film; semiconductor substrate; two-layered structure; Acoustic waves; Cellular phones; Gallium arsenide; Mobile communication; Monolithic integrated circuits; Piezoelectric films; Radio frequency; SAW filters; Substrates; Surface acoustic waves;

fLanguage

English

Publisher

ieee

Conference_Titel

Ultrasonics Symposium, 2001 IEEE

Conference_Location

Atlanta, GA

Print_ISBN

0-7803-7177-1

Type

conf

DOI

10.1109/ULTSYM.2001.991578

Filename

991578