• DocumentCode
    3785843
  • Title

    Detection of terahertz/sub-terahertz radiation by asymmetrically-shaped 2DEG layers

  • Author

    D. Seliuta;E. Sirmulis;V. Tamosiunas;S. Balakauskas;S. Asmontas;A. Suziedelis;J. Gradauskas;G. Valusis;A. Lisauskas;H.G. Roskos;K. Kohler

  • Author_Institution
    Semicond. Phys. Inst., Vilnius, Lithuania
  • Volume
    40
  • Issue
    10
  • fYear
    2004
  • fDate
    5/13/2004 12:00:00 AM
  • Firstpage
    631
  • Lastpage
    632
  • Abstract
    A diode structure to detect THz/subTHz radiation based on an MBE-grown modulation-doped GaAs/Al/sub 0.25/Ga/sub 0.75/As structure is proposed. Devices have an asymmetrically-shaped geometrical form in the plane of the structure and are fabricated as mesas of 2 /spl mu/m depth by wet etching. The incident terahertz/sub-terahertz radiation induces a voltage signal over the ends of the sample. Detection by non-uniform carrier heating effects under external illumination is explained and the device operation from 10 GHz up to 2.52 THz at room temperature is demonstrated.
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20040412
  • Filename
    1300307
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3785843