Title :
Ultrasonically stimulated diffusion of impurities in dislocation free silicon at room temperature
Author :
Ostrovskii, I.V. ; Nadtochiy, A.B. ; Steblenko, L.P. ; Podolyan, A.A.
Author_Institution :
Phys. Fac., Shevchenko Univ., Kiev, Ukraine
Abstract :
A discussion of the influence of ultrasound treatment (UST) at room temperature on the diffusion of impurities in a dislocation free Cz-Si is presented. We investigate the changes in surface properties and in photoelectric current decay (PCD). The experimental techniques are: chemical etching, and PCD measurements before and after UST. Also the initial data of UST influence on secondary ion mass spectrometry (SIMS) from sample surfaces are described. The results obtained strongly support the hypothesis of room temperature diffusion of impurities in dislocation free silicon under US action
Keywords :
diffusion; elemental semiconductors; etching; photoconductivity; secondary ion mass spectra; silicon; ultrasonic effects; Si; chemical etching; defect engineering; dislocation-free Czochralski silicon crystal; impurity diffusion; photoelectric current decay; physical acoustics; room temperature; secondary ion mass spectrometry; surface properties; ultrasound treatment; Chemicals; Etching; Frequency; Impurities; Optical surface waves; Silicon; Surface treatment; Temperature; Ultrasonic imaging; Ultrasonic variables measurement;
Conference_Titel :
Ultrasonics Symposium, 2001 IEEE
Conference_Location :
Atlanta, GA
Print_ISBN :
0-7803-7177-1
DOI :
10.1109/ULTSYM.2001.991649
