Ultrasonically stimulated diffusion of impurities in dislocation free silicon at room temperature

Author

Ostrovskii, I.V. ; Nadtochiy, A.B. ; Steblenko, L.P. ; Podolyan, A.A.

Author_Institution

Phys. Fac., Shevchenko Univ., Kiev, Ukraine

Volume

1

fYear

2001

fDate

2001

Firstpage

401

Abstract

A discussion of the influence of ultrasound treatment (UST) at room temperature on the diffusion of impurities in a dislocation free Cz-Si is presented. We investigate the changes in surface properties and in photoelectric current decay (PCD). The experimental techniques are: chemical etching, and PCD measurements before and after UST. Also the initial data of UST influence on secondary ion mass spectrometry (SIMS) from sample surfaces are described. The results obtained strongly support the hypothesis of room temperature diffusion of impurities in dislocation free silicon under US action

Keywords

diffusion; elemental semiconductors; etching; photoconductivity; secondary ion mass spectra; silicon; ultrasonic effects; Si; chemical etching; defect engineering; dislocation-free Czochralski silicon crystal; impurity diffusion; photoelectric current decay; physical acoustics; room temperature; secondary ion mass spectrometry; surface properties; ultrasound treatment; Chemicals; Etching; Frequency; Impurities; Optical surface waves; Silicon; Surface treatment; Temperature; Ultrasonic imaging; Ultrasonic variables measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Ultrasonics Symposium, 2001 IEEE

Conference_Location

Atlanta, GA

Print_ISBN

0-7803-7177-1

Type

conf

DOI

10.1109/ULTSYM.2001.991649

Filename

991649