• DocumentCode
    3786196
  • Title

    Optimization of an ultra low-phase noise sapphire-SiGe HBT oscillator using nonlinear CAD

  • Author

    G. Cibiel;M. Regis;O. Llopis;A. Rennane;L. Bary;R. Plana;Y. Kersale;V. Giordano

  • Author_Institution
    Lab. of Anal. & Archit. of Syst., Nat. Center of Sci. Res., Toulouse, France
  • Volume
    51
  • Issue
    1
  • fYear
    2004
  • Firstpage
    33
  • Lastpage
    41
  • Abstract
    In this paper, the electrical and noise performances of a 0.8 /spl mu/m silicon germanium (SiGe) transistor optimized for the design of low phase-noise circuits are described. A nonlinear model developed for the transistor and its use for the design of a low-phase noise C band sapphire resonator oscillator are also reported. The best measured phase noise (at ambient temperature) is -138 dBc/Hz at 1 kHz offset from a 4.85 GHz carrier frequency, with a loaded Q/sub L/ factor of 75,000.
  • Keywords
    "Heterojunction bipolar transistors","Oscillators","Circuit noise","Phase noise","Silicon germanium","Germanium silicon alloys","Design automation","Design optimization","Q measurement","Frequency measurement"
  • Journal_Title
    IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control
  • Publisher
    ieee
  • ISSN
    0885-3010
  • Type

    jour

  • DOI
    10.1109/TUFFC.2004.1268465
  • Filename
    1316564
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3786196