Title :
Optimization of an ultra low-phase noise sapphire-SiGe HBT oscillator using nonlinear CAD
Author :
G. Cibiel;M. Regis;O. Llopis;A. Rennane;L. Bary;R. Plana;Y. Kersale;V. Giordano
Author_Institution :
Lab. of Anal. & Archit. of Syst., Nat. Center of Sci. Res., Toulouse, France
Abstract :
In this paper, the electrical and noise performances of a 0.8 /spl mu/m silicon germanium (SiGe) transistor optimized for the design of low phase-noise circuits are described. A nonlinear model developed for the transistor and its use for the design of a low-phase noise C band sapphire resonator oscillator are also reported. The best measured phase noise (at ambient temperature) is -138 dBc/Hz at 1 kHz offset from a 4.85 GHz carrier frequency, with a loaded Q/sub L/ factor of 75,000.
Keywords :
"Heterojunction bipolar transistors","Oscillators","Circuit noise","Phase noise","Silicon germanium","Germanium silicon alloys","Design automation","Design optimization","Q measurement","Frequency measurement"
Journal_Title :
IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control
DOI :
10.1109/TUFFC.2004.1268465
