Title :
A new HCBT with a partially etched collector
Author :
T. Suligoj;P. Biljanovic;J.K.O. Sin;K.L. Wang
Author_Institution :
Dept. of Electr. & Electron. Eng., Hong Kong Univ. of Sci. & Technol., China
Abstract :
A novel horizontal current bipolar transistor (HCBT), suitable for the integration with the pillar-like MOSFETs, is processed with the reduced volume of the parasitic regions, achieved by the partial etching of the collector n-hill region and the self-protection of the p/sup +/ extrinsic base from tetramethyl ammonium hydroxide etch-back. The HCBT fabricated by a low-cost technology exhibits the cutoff frequency (f/sub T/) of 30.4 GHz, the maximum frequency of oscillations (f/sub max/) of 35GHz and the collector-emitter breakdown voltage (BV/sub CEO/) of 4.2 V, which are the highest f/sub T/ and the highest f/sub T/BV/sub CEO/ product among the lateral bipolar transistors (LBTs).
Keywords :
"Etching","Bipolar transistors","MOSFETs","Ion implantation","Silicon on insulator technology","Cutoff frequency","Silicon compounds","Semiconductor devices","Chemical technology","Integrated circuit technology"
Journal_Title :
IEEE Electron Device Letters
DOI :
10.1109/LED.2004.842437
