DocumentCode
3787761
Title
Electric field probing by picosecond laser pulses
Author
A. Krotkus;V. Pasiskevicius
Author_Institution
Semicond. Phys. Inst., Vilnius, Lithuania
Volume
28
Issue
12
fYear
1992
fDate
6/4/1992 12:00:00 AM
Firstpage
1137
Lastpage
1138
Abstract
A novel optoelectronic technique for electric field probing in semiconductor devices is described. It is based on monitoring of the transient displacement current produced in an external circuit by picosecond laser pulse excitation. The absolute electric field profile in an InP:Fe n-i-n structure is measured.
Keywords
"Electric field measurement","Laser measurement applications","Optoelectronic devices","Semiconductor device testing"
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19920716
Filename
141162
Link To Document