Title :
A 1.5 Mpixel imager with localized hole-modulation method
Author :
Miida, T. ; Kawajiri, K. ; Terakago, H. ; Endo, T. ; Okazaki, T. ; Yamamoto, S. ; Nishimura, A.
Author_Institution :
Innotech Corp., Yokohama, Japan
Abstract :
A 1.5 Mpixel imager with 4.2 /spl mu/m square pixel is composed of a single MOSFET and a pinned photodiode. A localized high-density p-region near the source of the MOSFET converts the accumulated hole number to source voltage. Low random noise, low dark signal, high sensitivity with good color reproduction and resolution are achieved.
Keywords :
CMOS image sensors; image colour analysis; image resolution; photodiodes; random noise; 1.5 Mpixel; 4.2 micron; CMOS imagers; MOSFET; accumulated hole number; color reproduction; dark signal; high-density p-region; localized hole-modulation method; pinned photodiode; random noise; resolution; sensitivity; source voltage; square pixel; CMOS image sensors; CMOS technology; Colored noise; Detectors; Energy consumption; FETs; Noise level; Pixel; System-on-a-chip; Voltage;
Conference_Titel :
Solid-State Circuits Conference, 2002. Digest of Technical Papers. ISSCC. 2002 IEEE International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-7335-9
DOI :
10.1109/ISSCC.2002.992929
