Title :
A 1.0 V V/sub DD/ CMOS active pixel image sensor with complementary pixel architecture fabricated with a 0.25 /spl mu/m CMOS process
Author :
Chen Xu ; Weiquan Zhang ; Mansun Chan
Author_Institution :
Electr. & Electron. Eng., Hong Kong Univ. of Sci. & Technol., Kowloon, China
Abstract :
A 128/spl times/128 complementary CMOS active-pixel sensor (CAPS) is fabricated in 0.25 /spl mu/m CMOS for low-voltage application. A single-slope with correlated double sampling (CDS) is used in the readout circuit. The chip operates at a V/sub DD/ as low as 0.8 V with 15 dB added dynamic range compared with conventional CMOS APS.
Keywords :
CMOS image sensors; correlation methods; image sampling; integrated circuit testing; low-power electronics; readout electronics; 0.25 micron; 0.8 V; 1 V; 128 pixel; 16384 pixel; CMOS APS; CMOS active pixel image sensor; CMOS process; chip operating voltage; complementary CMOS active-pixel sensor; complementary pixel architecture; correlated double sampling; dynamic range; low-voltage application; readout circuit; CMOS image sensors; CMOS process; CMOS technology; Crosstalk; Design engineering; Image sensors; MOSFET circuits; Multiplexing; Pixel; Voltage;
Conference_Titel :
Solid-State Circuits Conference, 2002. Digest of Technical Papers. ISSCC. 2002 IEEE International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-7335-9
DOI :
10.1109/ISSCC.2002.992930
