A 35 mm film format CMOS image sensor for camera-back applications

Author

Hurwitz, J. ; Panaghiston, M.J. ; Findlater, K.M. ; Henderson, R.K. ; Bailey, T.E.R. ; Holmes, A.J. ; Paisley, B.

Author_Institution

STMicroelectronics Imaging Div., Edinburgh, UK

Volume

1

fYear

2002

fDate

7-7 Feb. 2002

Firstpage

48

Abstract

A 5 V 1120×1808 pixel 35 mm film format CMOS image sensor for camera-back use, fabricated in 0.5 μm 2-poly 3-metal (2P3M) technology, includes integrated light-detection circuitry using non-destructive pixel read and consumes <50 μW. Reticle stitching is employed for the large format. Dynamic range is 66 dB and peak SNR is 55 dB.

Keywords

CMOS image sensors; cameras; nondestructive readout; phototransistors; 0.5 micron; 1120 pixel; 1808 pixel; 2024960 pixel; 3-metal 2-poly technology; 35 mm; 35 mm film format CMOS image sensor; 5 V; 50 muW; 55 dB; CMOS image sensors; bipolar phototransistor based light detectors; camera-back applications; custom-format image sensor; high-resolution device; integrated light-detection circuitry; nondestructive pixel readout; reticle stitching; solid-state imaging; standard analog CMOS technology; CMOS image sensors; Cameras; Capacitance; Energy consumption; Image edge detection; Image sensors; Optical arrays; Pixel; Sensor arrays; Solid state circuits;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Circuits Conference, 2002. Digest of Technical Papers. ISSCC. 2002 IEEE International

Conference_Location

San Francisco, CA, USA

Print_ISBN

0-7803-7335-9

Type

conf

DOI

10.1109/ISSCC.2002.992932

Filename

992932