Title :
A 45 GHz SiGe active frequency multiplier
Author :
Hackl, S. ; Bock, J. ; Ritzberger, G. ; Wurzer, M. ; Knapp, H. ; Treitinger, L. ; Scholtz, A.L.
Author_Institution :
Infineon Technol. AG, Munich, Germany
Abstract :
A frequency quadrupler for frequencies up to 45 GHz uses a pre-production 0.4 /spl mu/m SiGe bipolar technology. Gain is achieved at -15 dBm input power between 24 and 45 GHz with maximum of 7.3 dB at 44 GHz. The circuit draws 84 mA from a single 5 V supply.
Keywords :
Ge-Si alloys; MMIC frequency convertors; bipolar MIMIC; frequency multipliers; semiconductor materials; 0.4 micron; 24 to 45 GHz; 5 V; 7.3 dB; 84 mA; MMIC; SiGe; active frequency multiplier; bipolar technology; frequency quadrupler; input power; Circuits; Frequency conversion; Gallium arsenide; Germanium silicon alloys; HEMTs; Inductors; MODFETs; Manufacturing; Parasitic capacitance; Silicon germanium;
Conference_Titel :
Solid-State Circuits Conference, 2002. Digest of Technical Papers. ISSCC. 2002 IEEE International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-7335-9
DOI :
10.1109/ISSCC.2002.992949
