مرکز منطقه ای اطلاع رساني علوم و فناوري

DocumentCode :

3787998

Title :

Guest Editorial

Author :

A. Asenov;G.H. Bernstein

Volume :

Issue :

fYear :

2005

Firstpage :

301

Lastpage :

302

Keywords :

"Nanoscale devices","Physics","Semiconductor device modeling","Double-gate FETs","Semiconductor process modeling","Nanostructures","Fluctuations","Silicon","Space technology","Electron Devices Society"

Journal_Title :

IEEE Transactions on Nanotechnology

Publisher :

ieee

ISSN :

1536-125X

Type :

jour

DOI :

10.1109/TNANO.2005.846896

Filename :

1430663

Link To Document :

https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3787998