Title :
A 512 Mb NROM flash data storage memory with 8 MB/s data rate
Author :
Maayan, E. ; Dvir, R. ; Shor, J. ; Polansky, Y. ; Sofer, Y. ; Bloom, I. ; Avni, D. ; Eitan, B. ; Cohen, Z. ; Meyassed, M. ; Alpern, Y. ; Palm, H. ; v Kamienski, E.S. ; Haibach, P. ; Caspary, D. ; Riedel, S. ; Knofler, R.
Author_Institution :
Saifun Semicond. Ltd., Netanya, Israel
Abstract :
The NROM technology is applied to EEPROM, flash, and data storage product lines. All the products are based on the two-bit-per-cell core technology, using common design concepts, algorithms, circuits, and the same process architecture. Differing product requirements emphasize the versatility of the concept.
Keywords :
CMOS memory circuits; flash memories; 0.17 micron; 512 Mbit; EEPROM; NROM technology; data storage product lines; flash memory product lines; high-voltage CMOS process; nonvolatile memory device; two-bit-per-cell core technology; Channel hot electron injection; Dielectric devices; Flash memory; Hot carriers; MOSFET circuits; Nonvolatile memory; Parallel programming; Radio access networks; Tunneling; Voltage;
Conference_Titel :
Solid-State Circuits Conference, 2002. Digest of Technical Papers. ISSCC. 2002 IEEE International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-7335-9
DOI :
10.1109/ISSCC.2002.992958
