• DocumentCode
    3788060
  • Title

    Erratum

  • Volume
    5
  • Issue
    1
  • fYear
    2005
  • Firstpage
    155
  • Lastpage
    155
  • Keywords
    "Silicon germanium","Germanium silicon alloys","Thyristors","Electrostatic discharge","Protection","Circuits"
  • Journal_Title
    IEEE Transactions on Device and Materials Reliability
  • Publisher
    ieee
  • ISSN
    1530-4388
  • Type

    jour

  • DOI
    10.1109/TDMR.2005.849957
  • Filename
    1435400