Title :
A 2 GHz direct-conversion WCDMA modulator in 0.25 /spl mu/m CMOS
Author :
Brenna, G. ; Tschopp, D. ; Pfaff, D. ; Qiuting Huang
Author_Institution :
Integrated Syst. Lab., Swiss Fed. Inst. of Technol., Zurich, Switzerland
Abstract :
A modulator IC has been designed which delivers -8 dBm maximum output power. Gain is programmable over a 78 dB range in 1dB steps with 0.3 dB accuracy. Consuming 41 mA from a 2.5 V supply, the modulator achieves a 15 dBm OIP3, 50 dBm OIP2, 36 dB rejection of unwanted sideband, 47 dB carrier suppression and -148 dBc/Hz out-of-band-noise.
Keywords :
CMOS integrated circuits; cellular radio; code division multiple access; gain control; integrated circuit measurement; modulators; noise; 0.25 micron; 2 GHz; 2.5 V; 41 mA; CMOS direct-conversion WCDMA modulator; OIP2; OIP3; carrier suppression; cellular radio networks; gain accuracy; maximum output power; modulator IC; out-of-band-noise; programmable gain range; unwanted sideband rejection; BiCMOS integrated circuits; CMOS technology; Filters; Gain control; Impedance; Integrated circuit noise; Linearity; Multiaccess communication; Radio frequency; Radio transmitters;
Conference_Titel :
Solid-State Circuits Conference, 2002. Digest of Technical Papers. ISSCC. 2002 IEEE International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-7335-9
DOI :
10.1109/ISSCC.2002.993027
