DocumentCode

3788675

Title

Comments on "Gate leakage currents in MOS field-effect transistors"

Author

V.C. Negro;E.J. Kennedy

Author_Institution

U.S. Atomic Energy Commission, New York, N.Y.

Volume

55

Issue

8

fYear

1967

Firstpage

1540

Lastpage

1541

Keywords

"Leakage current","FETs","MOSFET circuits","Packaging","Displays","Diodes","Drives","Frequency","Testing","Impedance"

Journal_Title

Proceedings of the IEEE

Publisher

ieee

ISSN

0018-9219

Type

jour

DOI

10.1109/PROC.1967.5900

Filename

1447830