3788801

Correction to "Excess gate current in a junction-gate field-effect transistor"

Dang Luong Mo

Tokyo Shibaura Electric Co., Ltd., Kawasaki, Japan

59

5

1971

816

816

"FETs","Capacitance","Voltage","CMOS digital integrated circuits","Digital circuits","Bipolar transistor circuits","Impedance","Degradation","Circuit noise","Logic gates"

Proceedings of the IEEE

ieee

0018-9219

jour

10.1109/PROC.1971.8267

1450197