DocumentCode :
3788872
Title :
Comments on "Schottky-barrier devices with low barrier height"
Author :
A.C. MacPherson;H.M. Day;K. Kajiyama;S. Sakata;Y. Mizushima
Author_Institution :
Naval Research Laboratory, Washington, D.C.
Volume :
63
Issue :
6
fYear :
1975
Firstpage :
980
Lastpage :
981
Keywords :
"Schottky diodes","Semiconductor diodes","Detectors","Temperature sensors","Semiconductor device doping","Radio frequency","Semiconductor device noise","Gallium arsenide","Solid state circuits","Bandwidth"
Journal_Title :
Proceedings of the IEEE
Publisher :
ieee
ISSN :
0018-9219
Type :
jour
DOI :
10.1109/PROC.1975.9863
Filename :
1451793
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3788872
