• DocumentCode
    3789746
  • Title

    Correction to "Modulation-doped GaAs/(Al,Ga)As heterojunction field-effect transistors: MODFETs"

  • Author

    T.J. Drummond

  • Author_Institution
    Sandia National Laboratories, Albuquerque, NM, USA
  • Volume
    74
  • Issue
    12
  • fYear
    1986
  • Firstpage
    1803
  • Lastpage
    1803
  • Keywords
    "Epitaxial layers","Gallium arsenide","Heterojunctions","FETs","MODFETs","HEMTs","Electrical capacitance tomography"
  • Journal_Title
    Proceedings of the IEEE
  • Publisher
    ieee
  • ISSN
    0018-9219
  • Type

    jour

  • DOI
    10.1109/PROC.1986.13695
  • Filename
    1457963