• DocumentCode
    3789999
  • Title

    Further comments on "Complementary MOS-bipolar transistor structure"

  • Author

    H.C. Lin

  • Author_Institution
    Westinghouse Electric Corp. Baltimore, Md.
  • Volume
    17
  • Issue
    8
  • fYear
    1970
  • Firstpage
    637
  • Lastpage
    637
  • Journal_Title
    IEEE Transactions on Electron Devices
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1970.17045
  • Filename
    1476229