DocumentCode :
3790030
Title :
Correction to "Optimum low-level injection efficiency of silicon transistors with shallow arsenic emitters"
Author :
R.B. Fair
Author_Institution :
Bell Laboratories, Reading, Pa.
Volume :
20
Issue :
12
fYear :
1973
Firstpage :
1169
Lastpage :
1169
Journal_Title :
IEEE Transactions on Electron Devices
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1973.17816
Filename :
1477473
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3790030