An investigation of the sensitivity of lateral magnetotransistors

An investigation of the magnetic-field sensitivity of lateral, double base contact p-n-p magnetotransistor is reported. At very low collector current levels the sensitivity is an exponential function of the base current and rises up to 30 A/A.T at 1 T. At larger collector currents sensitivity decreases drastically and approaches the usual value of less then 1.5 A/A.T. This behaviour is explained in terms of a Hall-type voltage, which is generated in the base region and causes a magnetic-field-modulated injection of carriers.