DocumentCode :
3790203
Title :
Erratum
Author :
G.E. Smith
Volume :
6
Issue :
11
fYear :
1985
Firstpage :
609
Lastpage :
609
Keywords :
"Gallium arsenide","Tin","FETs","Ohmic contacts"
Journal_Title :
IEEE Electron Device Letters
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/EDL.1985.26248
Filename :
1485401
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3790203
