Title :
Reply to "Comments on ´a new low-noise AlGaAs/GaAs 2DEG FET with a surface undoped layer´"
Author :
H. Hida;K. Ohata;Y. Suzuki;H. Toyoshima
Author_Institution :
NEC Corporation, Kanagawa, Japan
Journal_Title :
IEEE Transactions on Electron Devices
DOI :
10.1109/T-ED.1987.23064
