DocumentCode :
3790384
Title :
Corrections to "Fabrication of High-Quality p-MOSFET in Ge Grown Heteroepitaxially on Si"
Author :
Y. Taur
Volume :
26
Issue :
9
fYear :
2005
Firstpage :
696
Lastpage :
696
Keywords :
"MOSFET circuits","Silicon","Equations","Electron devices"
Journal_Title :
IEEE Electron Device Letters
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2005.854961
Filename :
1499003
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3790384
