• DocumentCode
    3792788
  • Title

    The Influence of Selected Material and Transport Parameters on the Accuracy of Modeling Early Voltage in SiGe-Base HBT

  • Author

    A. Zareba;L. Lukasiak;A. Jakubowski

  • Author_Institution
    Inst. of Microelectron. & Optoelectronics, Warsaw Univ. of Technol.
  • Volume
    53
  • Issue
    8
  • fYear
    2006
  • Firstpage
    1946
  • Lastpage
    1948
  • Abstract
    Using a new model of Early voltage (VA), it is demonstrated that diffusion coefficient dependence on electric field and carrier velocity saturation at the collector end of the base has to be taken into account for accurate modeling of VA in SiGe-based heterojunction bipolar transistors. The need to incorporate the dependence of SiGe material parameters on the local Ge content in the base is also addressed
  • Journal_Title
    IEEE Transactions on Electron Devices
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/TED.2006.877869
  • Filename
    1661901
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3792788