• DocumentCode
    3792793
  • Title

    Silicon lens-coupled bow-tie InGaAs-based broadband terahertz sensor operating at room temperature

  • Author

    D. Seliuta;I. Kasalynas;V. Tamosiunas;S. Balakauskas;Z. Martunas;S. Asmontas;G. Valusis;A. Lisauskas;H.G. Roskos;K. Kohler

  • Author_Institution
    Semicond. Phys. Inst., Vilnius, Lithuania
  • Volume
    42
  • Issue
    14
  • fYear
    2006
  • fDate
    7/6/2006 12:00:00 AM
  • Firstpage
    825
  • Lastpage
    827
  • Abstract
    A passive detection scheme for broadband, 10 GHz-2.52 THz, sensing at room temperature is demonstrated using a hemispherical silicon lens-coupled diode of an asymmetrically-shaped bow-tie geometrical form. The device is fabricated from an MBE-grown In/sub 0.54/Ga/sub 0.46/As wafer as mesas of 3 /spl mu/m depth produced by wet etching. The detector exhibits voltage sensitivity about 5 V/W below 1 THz.
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20061224
  • Filename
    1661997
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3792793