مرکز منطقه ای اطلاع رساني علوم و فناوري - Corrections to “On the Modeling and Design of Schottky Field-Effect Transistors” and “Comparison Study of Tunneling Models for Schottky Field Effect Transistors and the Effect of Schottky Barrier Lowering”

DocumentCode :

3793912

Title :

Corrections to “On the Modeling and Design of Schottky Field-Effect Transistors” and “Comparison Study of Tunneling Models for Schottky Field Effect Transistors and the Effect of Schottky Barrier Lowering”

Author :

R.A. Vega

Volume :

Issue :

fYear :

2006

Firstpage :

2423

Lastpage :

2423

Journal_Title :

IEEE Transactions on Electron Devices

Publisher :

ieee

ISSN :

0018-9383

Type :

jour

DOI :

10.1109/TED.2006.882619

Filename :

1677886

Link To Document :

https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3793912