DocumentCode :
3795449
Title :
Corrections to “Device Linearity Comparison of Uniformly Doped and
$delta$
-Doped
$hboxIn_0.52hboxAl_0.48hboxAs/hboxIn_0.6hboxGa_0.4hboxAs$
Metamorphic HEMTs”
Author :
Y.C. Lin;E.Y. Chang;H. Yamaguchi;Y. Hirayama;X.Y. Chang;C.Y. Chang
Volume :
27
Issue :
10
fYear :
2006
Firstpage :
866
Lastpage :
866
Keywords :
"Linearity","mHEMTs","Electron devices","Councils","Materials science and technology","Microelectronics","Information systems","Laboratories"
Journal_Title :
IEEE Electron Device Letters
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2006.884081
Filename :
1704925
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3795449
